Y. L. Cheng, J. Kao, H. W. Zhang, C. Y. Lee, “Comparison of Self-Assembled Monolayers Using 3-Aminopropyltrimethoxysilane and Decyltrimethoxysilane in Vapor Phase for Porous SiOCH Dielectrics”, Coatings, 13 (2023) 507.
Y. L. Cheng, K. H. Wang, Z. Y. Wu , W. F. Peng, C. Y. Lee, G. S. Chen, J. S. Fang, “Comparison of CoW/SiO2 and CoB/SiO2 interconnects from perspective of electrical and reliability characteristics”, Materials. 16 (2023) 1452.
Y. L. Cheng, C. K. Huang, W. F. Peng, G. S. Chen, J. S. Fang, “Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials”, Molecules. 28 (2023) 1134.
J. S. Fang, K. H. Chen, Y. L. Cheng, and G. S. Chen, “Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement”, Materials Chemistry and Physics, 296 (2023) 127222.
G. S. Chen, Y. C. Pan, W. C. Chen, N. Hsiao, C. C. Chang, Y. L. Cheng, J. S. Fang, “Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nanolines for future interconnect applications”, Applied Surface Science, 609 (2023) 155387.
G. S. Chen, C. E. Lee, Y. L. Cheng, J. S. Fang, Cheng, C. N. Hsiao, W. C. Chen, Y. H. Chang, Y. C. Pan, W. Lee, T. H. Su, “Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1-nm-Thin Self-Assembled Monolayer”, ECS J. Electrochemical Society, 169 (2022) 082519.
T. K. Tsai, I. T. Shih, Y. L. Cheng, G. S. Chen, J. S. Fang, Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron, Materials Chemistry and Physics, 17 (2022) 126136.
Y. L. Cheng, C. Y. Lee, W. F. Peng, G. S. Chen, J. S. Fang, Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH, Dielectrics by Decyltrimethoxysilane Vapor Treatment, Coatings, 12(7) (2022) 926.
Y. L. Cheng, C. Y. Lee, W. F. Peng, Self-Assembled Monolayers on Porous Low-k Dielectrics by Decyltrimethoxysilane Vapor Treatment : A Perspective from Electrical Char
Y. L. Cheng*, Y. L. Lin, W. F. Peng, and C. Y. Lee, “Electrical Characteristics and Reliability of SiCN/ Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film”, ECS Journal of Solid State Science and Technology. 10 (2021) 123002.
G. S. Chen, C. E. Lee, T M. Yang, Y. L. Cheng, and J. S. Fang, “Structural models and barrier properties of amine-terminated trialkoxysilane monolayers incubated in nonpolar vs. polar protic solvents”, Materials Chemistry and Physics, 274 (2021) 125718.
G. S. Chen, C. E. Lee, T M. Yang, Y. L. Cheng, and J. S. Fang, “All-wet encapsulation and electroless superfilling process for the fabrication of selfassembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability”, Materials Letters, 303 (2021) 130718.
J. S. Fang, C. E. Lee, Y. L. Cheng, and G. S. Chen, “Strengthening the electromigration resistance of nanoscaled copper lines by (3-aminopropyl) trimethoxysilane self-assembled monolayer", ECS Journal of Solid State Science and Technology, 10 (2021) 083007.
Y. L. Cheng*, W. F. Peng, C. Y. Lee, G. S. Chen, Y. N. Lin, and J. S. Fang, “From Electrical and Reliability Perspective for Self-Forming Barrier CuSc Metallization ", ECS Journal of Solid State Science and Technology, 10 (2021) 65014.
Y. L. Cheng*, C. Y. Lee, G. S. Chen, and J. S. Fang, “Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film", ECS Journal of Solid State Science and Technology, 10 (2021) 063005.
J. S. Fang, Y. L. Wu, Y. L. Cheng, and G. S. Chen, “Synthesis of dilute phosphorous-embedded Co alloy films on NiSi substrate with a superior gap-filling capability for nanoscale interconnects” J. Electrochemical Society, 168 (2021) 042505.
C. Y. Lee, C. Y. Yan, and Y. L. Cheng*, “In-situ Repair Plasma-induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment”, Coatings, 11 (2021) 314.
P. Y. Yin, H. M. Chen, Y. L. Cheng, Y. C. Wei, Y. L. Huang, and R. F. Day, “Minimizing the Makespan in Flowshop Scheduling for Sustainable Rubber Circular Manufacturing”, Sustainability, 13 (2021) 2576.
J. S. Fang, T. M. Yang, Y. L. Cheng, and G. S. Chen, 3-Aminopropyltrimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization”, ECS Journal of Solid State Science and Technology, 10 (2021 ) 023003.
G. S. Chen, W. L. Gao, J. S. Fang, Y. L. Cheng*, “Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier”, Materials Chemistry and Physics, 259 (2021) 124034.
