鄭義榮 - 學術表現

特聘教授
鄭義榮
學歷
國立交通大學 材料科學與工程學系博士
研究領域
(1)半導體製程
(2)銅製程
(3)薄膜製程
(4)Low-k/High-k 材料
(5)可靠度分析
(6)內連線可靠度
(049)291-0960 轉 4987
yjcheng@ncnu.edu.tw
科一館425
Journal papers
- Y. L. Cheng, J. Kao, H. W. Zhang, C. Y. Lee, “Comparison of Self-Assembled Monolayers Using 3-Aminopropyltrimethoxysilane and Decyltrimethoxysilane in Vapor Phase for Porous SiOCH Dielectrics”, Coatings, 13 (2023) 507.
- Y. L. Cheng, K. H. Wang, Z. Y. Wu , W. F. Peng, C. Y. Lee, G. S. Chen, J. S. Fang, “Comparison of CoW/SiO2 and CoB/SiO2 interconnects from perspective of electrical and reliability characteristics”, Materials. 16 (2023) 1452.
- Y. L. Cheng, C. K. Huang, W. F. Peng, G. S. Chen, J. S. Fang, “Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials”, Molecules. 28 (2023) 1134.
- J. S. Fang, K. H. Chen, Y. L. Cheng, and G. S. Chen, “Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement”, Materials Chemistry and Physics, 296 (2023) 127222.
- G. S. Chen, Y. C. Pan, W. C. Chen, N. Hsiao, C. C. Chang, Y. L. Cheng, J. S. Fang, “Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nanolines for future interconnect applications”, Applied Surface Science, 609 (2023) 155387.
- G. S. Chen, C. E. Lee, Y. L. Cheng, J. S. Fang, Cheng, C. N. Hsiao, W. C. Chen, Y. H. Chang, Y. C. Pan, W. Lee, T. H. Su, “Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1-nm-Thin Self-Assembled Monolayer”, ECS J. Electrochemical Society, 169 (2022) 082519.
- T. K. Tsai, I. T. Shih, Y. L. Cheng, G. S. Chen, J. S. Fang, Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron, Materials Chemistry and Physics, 17 (2022) 126136.
- Y. L. Cheng, C. Y. Lee, W. F. Peng, G. S. Chen, J. S. Fang, Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH, Dielectrics by Decyltrimethoxysilane Vapor Treatment, Coatings, 12(7) (2022) 926.
- Y. L. Cheng, C. Y. Lee, W. F. Peng, Self-Assembled Monolayers on Porous Low-k Dielectrics by Decyltrimethoxysilane Vapor Treatment : A Perspective from Electrical Char
- Y. L. Cheng*, Y. L. Lin, W. F. Peng, and C. Y. Lee, “Electrical Characteristics and Reliability of SiCN/ Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film”, ECS Journal of Solid State Science and Technology. 10 (2021) 123002.
- G. S. Chen, C. E. Lee, T M. Yang, Y. L. Cheng, and J. S. Fang, “Structural models and barrier properties of amine-terminated trialkoxysilane monolayers incubated in nonpolar vs. polar protic solvents”, Materials Chemistry and Physics, 274 (2021) 125718.
- G. S. Chen, C. E. Lee, T M. Yang, Y. L. Cheng, and J. S. Fang, “All-wet encapsulation and electroless superfilling process for the fabrication of selfassembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability”, Materials Letters, 303 (2021) 130718.
- J. S. Fang, C. E. Lee, Y. L. Cheng, and G. S. Chen, “Strengthening the electromigration resistance of nanoscaled copper lines by (3-aminopropyl) trimethoxysilane self-assembled monolayer", ECS Journal of Solid State Science and Technology, 10 (2021) 083007.
- Y. L. Cheng*, W. F. Peng, C. Y. Lee, G. S. Chen, Y. N. Lin, and J. S. Fang, “From Electrical and Reliability Perspective for Self-Forming Barrier CuSc Metallization ", ECS Journal of Solid State Science and Technology, 10 (2021) 65014.
- Y. L. Cheng*, C. Y. Lee, G. S. Chen, and J. S. Fang, “Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film", ECS Journal of Solid State Science and Technology, 10 (2021) 063005.
- J. S. Fang, Y. L. Wu, Y. L. Cheng, and G. S. Chen, “Synthesis of dilute phosphorous-embedded Co alloy films on NiSi substrate with a superior gap-filling capability for nanoscale interconnects” J. Electrochemical Society, 168 (2021) 042505.
- C. Y. Lee, C. Y. Yan, and Y. L. Cheng*, “In-situ Repair Plasma-induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment”, Coatings, 11 (2021) 314.
- P. Y. Yin, H. M. Chen, Y. L. Cheng, Y. C. Wei, Y. L. Huang, and R. F. Day, “Minimizing the Makespan in Flowshop Scheduling for Sustainable Rubber Circular Manufacturing”, Sustainability, 13 (2021) 2576.
- J. S. Fang, T. M. Yang, Y. L. Cheng, and G. S. Chen, 3-Aminopropyltrimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization”, ECS Journal of Solid State Science and Technology, 10 (2021 ) 023003.
- G. S. Chen, W. L. Gao, J. S. Fang, Y. L. Cheng*, “Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier”, Materials Chemistry and Physics, 259 (2021) 124034.